Epitaxial Technologies for SiGeSn High Performance Optoelectronic Devices

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9550-14-C-0044
Agency Tracking Number: F141-002-0423
Amount: $150,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: AF141-002
Solicitation Number: 2014.1
Timeline
Solicitation Year: 2014
Award Year: 2015
Award Start Date (Proposal Award Date): 2014-10-01
Award End Date (Contract End Date): 2015-03-31
Small Business Information
1339 S. Pinnacle Dr., Fayetteville, AR, 72701-
DUNS: 079243008
HUBZone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: N
Principal Investigator
 Baohua Li
 President
 (479) 287-2406
 Baohua.Li@asu.edu
Business Contact
 Baohua Li
Title: President
Phone: (479) 287-2406
Email: Baohua.Li@asu.edu
Research Institution
 Stub
Abstract
ABSTRACT: Silicon-based lasers/detectors have long been desired for owing to the possibility of monolithic integration of photonics with high-speed Si electronics and the aspiration of broadening the reach of Si technology by expanding its functionalities well beyond electronics. The goal of this project is to first develop high quality SiGeSn material and then use it to demonstrate prototype optoelectronic devices. The research plan includes UHV-CVD growth of mid-IR SiGeSn materials and material characterization as well as development of GeSn mid-IR detectors and lasers. The innovative claims include: i) using novel techniques such as Plasma Enhancement and Atomic Hydrogen Enhancement for device quality SiGeSn growth, ii) high performance GeSn based photodetectors with high responsivity, high gain-bandwidth product, low dark current, CMOS compatibility, and extended spectra response, iii) GeSn based lasers transforming the new active direct band gap material to the first all group-IV inter-band lasers on Si. The work will create significant impacts to the scientific community by enabling the so-called Si optoelectronics superchip, to extend the current Si-photonics wavelength range to mid-infrared, and to enable numerous commercial applications in telecom, consuming electronics, to renewable energy. BENEFIT: Devices such as lasers, detectors, and solar cells with applications in telecom, consuming electronics, and renewable energy

* Information listed above is at the time of submission. *

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