Rectifying Junctions for High Temperature, High Power Electronics

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$951,141.00
Award Year:
1996
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
28396
Agency Tracking Number:
28396
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
4370 N.e. Halsey, Suite 233, Portland, OR, 97213
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
James Delbert Parsons
(503) 690-1397
Business Contact:
() -
Research Institute:
n/a
Abstract
The single most important type of metal/SiC junction is the n-type, rectifying Schottky diode, because it is the voltage blocking junction in all majority carrier devices. A reliable junction of this type for n-type SiC is the key to its development for high temperature, power conditioning electronics. Phase I will demonstrate that osmium is the ideal metal for forming such junctions. Phase II will develop SiC fast recovery diodes and MESFETs that can perform power conditioning and communications circuits applications at thigh temperatures. These devices will form the foundation for developing prototype devices and circuits to address specific applications requirements of DoD systems, and manufacturers of commercial products (e.g. cellular phones) in Phase III. Commercial markets for SiC (especially B-SiC) devices utilizing this type of junction are: high frequency power (B-SiC) solid state power devices, ultra fast recovery diodes for power conditioning, and mixer diodes for cellular phones communication.

* information listed above is at the time of submission.

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