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64MB+ Radiation-Hardened, Non-Volatile Memory for Space

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9453-14-M-0105
Agency Tracking Number: F141-250-2046
Amount: $149,257.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: AF141-250
Solicitation Number: 2014.2
Timeline
Solicitation Year: 2014
Award Year: 2014
Award Start Date (Proposal Award Date): 2014-06-30
Award End Date (Contract End Date): 2015-03-30
Small Business Information
1415 Bond St. #111
Naperville, IL 60563
United States
DUNS: 000000000
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Robert Patti
 CTO
 (630) 505-0404
 rpatti@tezzaron.com
Business Contact
 Robert Patti
Title: CTO
Phone: (630) 505-0404
Email: rpatti@tezzaron.com
Research Institution
 Stub
Abstract

ABSTRACT: ReRAM has made significant progress over the last few years and is ready for development by early adopters. Tezzaron proposes to create a multilayer 3D assembled ReRAM memory device using Rambus ReRAM technology and Honeywell RH wafers. The phase II target device will be radiation hardened, low power, non-volatile and have a density in excess of 512Mbits. BENEFIT: A ReRAM device offers great advantages over other current non-volatile radiation hardened devices. The ReRAM has fast read and write with low power. The low write currents scale with technology making the ReRAM a viable choice for current and future semiconductor technology nodes. The ReRAM memory cell is virtually unaffected by radiation making it a good choice for space applications. These same attributes also make the targeted device valuable for a large number of applications in aviation and automotive fields.

* Information listed above is at the time of submission. *

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