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Low Power Monolayer MoS2 Transistors for RF Applications
Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-14-P-0028
Agency Tracking Number: A14A-008-0120
Amount:
$150,000.00
Phase:
Phase I
Program:
STTR
Solicitation Topic Code:
A14A-T008
Solicitation Number:
2014.A
Timeline
Solicitation Year:
2014
Award Year:
2014
Award Start Date (Proposal Award Date):
2014-08-28
Award End Date (Contract End Date):
2015-02-22
Small Business Information
8829 Midway West Road
Raleigh, NC
27617-4606
United States
DUNS:
020080607
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Robert Metzger
Title: Chief Technology Officer
Phone: (919) 789-8880
Email: metzger@kymatech.com
Title: Chief Technology Officer
Phone: (919) 789-8880
Email: metzger@kymatech.com
Business Contact
Name: Heather Splawn
Title: Chief Operating Officer
Phone: (919) 789-8880
Email: contracts@kymatech.com
Title: Chief Operating Officer
Phone: (919) 789-8880
Email: contracts@kymatech.com
Research Institution
Name: Pennsylvania State University
Contact: Bradley King
Address:
Phone: (814) 865-1091
Type: Nonprofit College or University
Contact: Bradley King
Address:
University Park
State College, PA
16801-
United States
Phone: (814) 865-1091
Type: Nonprofit College or University
Abstract
Utilizing a novel solid/gas source CVD reactor designed for the growth of large area (substrates up to 4"in diameter) MoS2 single layer (SL) and multiple layer (ML) films, and leveraging already demonstrated capabilities in the growth and fabrication of 2D-FETs based on graphene and WSe2, we are proposing the growth, fabrication and testing of MoS2-based RF FETs. Utilizing a novel and optimized source/drain contact approach, the targeted performance of these FETs is to achieve ft and fmax>5 GHz, while handling a DC power>10µW and an RF power output>1.0µW.
* Information listed above is at the time of submission. *
