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Low Power Monolayer MoS2 Transistors for RF Applications

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-14-P-0028
Agency Tracking Number: A14A-008-0120
Amount: $150,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A14A-T008
Solicitation Number: 2014.A
Solicitation Year: 2014
Award Year: 2014
Award Start Date (Proposal Award Date): 2014-08-28
Award End Date (Contract End Date): 2015-02-22
Small Business Information
8829 Midway West Road
Raleigh, NC 27617-4606
United States
DUNS: 020080607
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Robert Metzger
 Chief Technology Officer
 (919) 789-8880
Business Contact
 Heather Splawn
Title: Chief Operating Officer
Phone: (919) 789-8880
Research Institution
 Pennsylvania State University
 Bradley King
University Park
State College, PA 16801-
United States

 (814) 865-1091
 Nonprofit College or University

Utilizing a novel solid/gas source CVD reactor designed for the growth of large area (substrates up to 4"in diameter) MoS2 single layer (SL) and multiple layer (ML) films, and leveraging already demonstrated capabilities in the growth and fabrication of 2D-FETs based on graphene and WSe2, we are proposing the growth, fabrication and testing of MoS2-based RF FETs. Utilizing a novel and optimized source/drain contact approach, the targeted performance of these FETs is to achieve ft and fmax>5 GHz, while handling a DC power>10µW and an RF power output>1.0µW.

* Information listed above is at the time of submission. *

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