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Innovative Polishing Technology for Fabrication of High Performance Epi-ready GaSb Substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-14-C-7712
Agency Tracking Number: B2-1951
Amount: $899,995.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: MDA12-T003
Solicitation Number: 2012.A
Timeline
Solicitation Year: 2012
Award Year: 2014
Award Start Date (Proposal Award Date): 2014-02-28
Award End Date (Contract End Date): 2016-02-26
Small Business Information
1912 NW 67th Place, Gainesville, FL, -
DUNS: 024935517
HUBZone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: N
Principal Investigator
 Rajiv Singh
 Chief Technology Officer
 (352) 334-7270
 rksingh@sinmat.com
Business Contact
 Deepika Singh
Title: President&CEO
Phone: (352) 334-7237
Email: singh@sinmat.com
Research Institution
 University of Florida
 Roslyn S Heath
 339 Weil Hall
Gainesville, FL, 32611-6550
 (352) 392-9447
 Nonprofit college or university
Abstract
Antimony containing III-V semiconducting compounds are particularly attractive for the fabrication of a wide variety of electronic and optoelectronic devices such as photo detectors operating in the long wave infrared wavelength (12-32µm) range. The production of epi quality GaSb wafers still remains one of the important problems for rapid commercialization of GaSb devices. In Phase I effort, we successfully demonstrated a polishing process to significantly reduce surface roughness (<2), eliminate sub-surface damage and form a passivated GaSb surface. In Phase II of this project we plan to further develop and optimize our polishing and passivation process for low cost, reliable fabrication of ultra-smooth (<2 roughness), sub-surface damage-free, low TTV large size (upto 6") GaSb substrates. Epi-ready GaSb substrate will significantly improve the performance of long wave infrared detectors and other devices.

* Information listed above is at the time of submission. *

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