Long Coherence Length 193 nm Laser for High-Resolution Nano-Fabrication

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$98,991.00
Award Year:
2007
Program:
STTR
Phase:
Phase I
Contract:
W31P4Q-07-C-0262
Agency Tracking Number:
07ST1-0051
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
ACTINIX
229 Technology Circle, Scotts Valley, CA, 95066
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
009424420
Principal Investigator:
Andrew Merriam
Chief Scientist
(831) 440-9388
merriam@actinix.com
Business Contact:
James Jacob
President
(831) 440-9388
jjj@actinix.com
Research Institution:
SANDIA NATIONAL LABORATORIES
Arlee Smith
Department 1118
MS 1423
Albuquerque, NM, 87185 1423
(505) 844-5810
Federally funded R&D center (FFRDC)
Abstract
Immersion lithography using available 193 nm optics and laser sources provides an attractive near-term path to reducing the printable feature sizes of integrated circuits by using a high-index fluid to reduce the wavelength at the wafer, rather than using light with higher photon energy and shorter vacuum wavelength. An interferometric immersion lithography (IIL) tool has demonstrated rapid fabrication of grating structures with half-pitches of 35 nm over exposure areas of 0.5 mm. This Phase I project involves the design of a new fiber laser based 193 nm light source with very high spatial- and temporal-coherence to allow uniform high-contrast intensity fringes (35 nm HP) to illuminate a wafer surface over a substantially larger exposure area, on the order of one square cm per exposure site. In addition, the laser will have high power stability and be sufficiently robust to allow extended periods of operation with little maintenance or operator intervention.

* information listed above is at the time of submission.

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