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High-performance 1024x1024 MWIR/LWIR Dual-band InAs/GaSb Type-II Superlattice-based Camera System

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX14CG01C
Agency Tracking Number: 124022
Amount: $749,954.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: S1.03
Solicitation Number: N/A
Timeline
Solicitation Year: 2012
Award Year: 2014
Award Start Date (Proposal Award Date): 2014-04-23
Award End Date (Contract End Date): 2016-04-22
Small Business Information
1801 Maple Avenue
Evanson, IL 60208-3150
United States
DUNS: 129503988
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Arash Dehzangi
 Technical Director
 (940) 442-1602
 arashd53@hotmail.com
Business Contact
 Manijeh Razeghi
Title: Business Official
Phone: (847) 491-7208
Email: mpt1pnc6@yahoo.com
Research Institution
 Stub
Abstract

High performance LWIR detectors are highly needed. In order to image from long distance, it is important that imagers have high sensitivity, high resolution, and very low dark currents. This leads to technical goals of having low noise, low dark current in small size pixels in large arrays. While saturated performance levels of traditional systems based on bulk semiconductors have not quite met the requirement of applications, it is expected that novel quantum systems will bring new development stage for infrared imagers. In recent years, Type-II InAs/GaSb superlattice (T2SL) has experienced significant development, from theoretical modeling, material growth to device processing and packaging. Performance of LWIR detector based on T2SL has become comparable, even better than that of HgCdTe. However, LWIR T2SL devices have been shown to be limited by surface leakage, especially at lower operating temperature. This proposed effort will investigate gating of Type-II photodiodes as a means to suppress this bottle neck of T2SL technology. The ultimate goal of this project is to develop an effective method to completely suppress the surface leakage current in LWIR type-II superlattice photodiodes that is compatible with the development of high performance gated FPAs in Phase II.

* Information listed above is at the time of submission. *

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