High Power Mid-Infrared (2-10 Micron) Diode Laser Development

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$100,000.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
F29601-03-M-0102
Award Id:
62215
Agency Tracking Number:
F031-0094
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
11805 North Creek Parkway S., Suite 113, Bothell, WA, 98011
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
801518747
Principal Investigator:
ChuckMiyake
Vice President
(425) 482-1100
cmiyake@aculight.com
Business Contact:
DennisLowenthal
Vice President of R&D
(425) 482-1100
dennis.lowenthal@aculight.com
Research Institute:
n/a
Abstract
Advanced IRCM lasers and systems, currently in development, require mid-infrared semiconductor lasers with very non-standard design parameters. The proposed effort will investigate the performance of commercially grown GaSb based materials and optimizetheir performance for use in unique laser transmitter designs, which will be directly traceable to future IRCM systems. The proposed mid-infrared laser technology has potential applications in spectroscopic gas sensing systems for environmentalmonitoring, explosive detection and industrial process monitoring sensors.

* information listed above is at the time of submission.

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