PRECURSORS FOR CARBON FREE ALGAAS

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: N/A
Agency Tracking Number: 9392
Amount: $72,992.00
Phase: Phase I
Program: SBIR
Awards Year: 1989
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Advanced Technology Materials
520-b Danbury Rd, New Milford, CT, 06776
Duns: N/A
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr Duncan W Brown
 (203) 355-2681
Business Contact
Phone: () -
Research Institution
N/A
Abstract
WIDESPREAD APPLICATION OF HIGH PERFORMANCE DEVICES BASED ON III-VI COMPOUND SEMICONDUCTOR WILL DEPEND ON THE DEVELOPMENT OF ECONOMIC AND HIGH-QUALITY MANUFACTURING METHODS. DURING THE LAST FEW YEARS, ORGANOMETALLIC BASED PROCESSES HAVE EVOLVED INTO THE MOST PROMISING TECHNIQUES FOR THE PRODUCTION OF ULTRA-HIGH PURITY COMPOUND SEMICONDUCTOR MATERIALS IN COMPLEX LAYERED STRUCTURES REQUIRED FOR ADVANCED DEVICES. FEASIBILITY HAS BEEN DEMONSTRATED IN THE LABORATORY; EPITAXIAL LAYERS WITH THE REQUIRED INTERFACE ABRUPTNESS AND CLOSE TO THE REQUIRED PURITY HAVE BEEN OBTAINED FOR THE MATERIALS SYSTEMS OF MAJOR INTEREST, GAAS/ALGAAS AND GAINASP/INP. A MAJOR CHALLENGE NOW CONFRONTS BOTH THE MATERIALS AND CHEMICAL COMMUNITIES. SIGNIFICANT PROGRESS MUST BE MADE IN ALUMINUM PRECURSOR IDENTITY, QUALITY, AND CONSISTENCY. ALUMINUM-CONTAINING FILMS, EVEN P-TYPE LAYERS GROWN WITH ADDUCT PURIFIED TRIMETHYLALUMINUM, STILL CONTAIN UNACCEPTABLY HIGH QUANTITIES OF CARBON. IN PHASE I WE WILL DEMONSTRATE REDUCED CARBON INCORPORATION IN ALGAAS THROUGH THE INTRODUCTION OF A NEW ALUMINUM SOURCE REAGENT. IN PHASE II WE WILL DEVELOP MANUFACTURING METHODS FOR THE PRODUCTION OF ELECTRONIC GRADE MATERIAL.

* information listed above is at the time of submission.

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