PRECURSORS FOR CARBON FREE ALGAAS

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$72,992.00
Award Year:
1989
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
9392
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Advanced Technology Materials
520-b Danbury Rd, New Milford, CT, 06776
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr Duncan W Brown
(203) 355-2681
Business Contact:
() -
Research Institution:
n/a
Abstract
WIDESPREAD APPLICATION OF HIGH PERFORMANCE DEVICES BASED ON III-VI COMPOUND SEMICONDUCTOR WILL DEPEND ON THE DEVELOPMENT OF ECONOMIC AND HIGH-QUALITY MANUFACTURING METHODS. DURING THE LAST FEW YEARS, ORGANOMETALLIC BASED PROCESSES HAVE EVOLVED INTO THE MOST PROMISING TECHNIQUES FOR THE PRODUCTION OF ULTRA-HIGH PURITY COMPOUND SEMICONDUCTOR MATERIALS IN COMPLEX LAYERED STRUCTURES REQUIRED FOR ADVANCED DEVICES. FEASIBILITY HAS BEEN DEMONSTRATED IN THE LABORATORY; EPITAXIAL LAYERS WITH THE REQUIRED INTERFACE ABRUPTNESS AND CLOSE TO THE REQUIRED PURITY HAVE BEEN OBTAINED FOR THE MATERIALS SYSTEMS OF MAJOR INTEREST, GAAS/ALGAAS AND GAINASP/INP. A MAJOR CHALLENGE NOW CONFRONTS BOTH THE MATERIALS AND CHEMICAL COMMUNITIES. SIGNIFICANT PROGRESS MUST BE MADE IN ALUMINUM PRECURSOR IDENTITY, QUALITY, AND CONSISTENCY. ALUMINUM-CONTAINING FILMS, EVEN P-TYPE LAYERS GROWN WITH ADDUCT PURIFIED TRIMETHYLALUMINUM, STILL CONTAIN UNACCEPTABLY HIGH QUANTITIES OF CARBON. IN PHASE I WE WILL DEMONSTRATE REDUCED CARBON INCORPORATION IN ALGAAS THROUGH THE INTRODUCTION OF A NEW ALUMINUM SOURCE REAGENT. IN PHASE II WE WILL DEVELOP MANUFACTURING METHODS FOR THE PRODUCTION OF ELECTRONIC GRADE MATERIAL.

* information listed above is at the time of submission.

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