NOVEL MERCURY CADMIUM TELLURIDE GROWTH PROCESS

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$50,000.00
Award Year:
1990
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
11900
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Advanced Technology Materials,
520-b Danbury Road, New Milford, CT, 06776
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Peter S. Kirlin
Mgr. Superconductor Oper.
(203) 355-2681
Business Contact:
E. G. BANUCCI
PRESIDENT
(203) 355-2681
Research Institution:
n/a
Abstract
MERCURY CADMIUM TELLURIDE (MCT) ALLOYS ARE OF MAJOR IMPORTANCE FOR NONCRYOGENICALLY COOLED 1.0 TO 16.0 MU M (IR)DETECTOR ARRAYS. WIDESPREAD DEPLOYMENT OF MCT ARRAYS BASED ON HIGH SENSITIVITY PHOTODIODES HAS BEEN SLOWED BY THE DEARTH OF REPEATABLE GROWTH PROCESSES CAPABLE OF PRODUCING HIGH QUALITY FILMS AND DEVICES WITH ABRUPT OR CONTROLLED JUNCTIONS. A NEW UNASSISTED PYROLYTIC METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) APPROACH IS PROPOSED TO GROW EPITAXIAL HG1-XCDXTE (X 1) ALLOYS WITH +1% COMPOSITION AND THICKNESS UNIFORMITY OVER LARGE AREAS. HIGH MERCURY CONCENTRATIONS AT 10 MU M/H GROWTH RATES AND SUBSTRATE TEMPERATURES BELOW 300 DEGREES CENTIGRADE SHOULD BE POSSIBLE WITH THIS METHOD. THE INNOVATIVE ELEMENTS OF THIS APPROACH ARE THE USE OF A UNIQUE SOURCE REAGENT SYSTEM TO ENHANCE THE GROWTH PROCESS AND THE INCORPORATION OF A NOVEL REACTANT INLET PORT TO INCREASE THE VAPOR PRESSURE OF MERCURY AT THE GROWTH SURFACE. PHASE I WILL YIELD A REPRODUCIBLE EPITAXIAL MCT GROWTH PROCESS AND LAY THE FOUNDATION FOR MCT IR DETECTOR PHOTODIODE MANUFACTURING PROCESS DEVELOPMENT IN PHASE II.

* information listed above is at the time of submission.

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