GROUP IV SEMICONDUCTOR ATOMIC LAYER EPITAXY

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$69,259.00
Award Year:
1990
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
13154
Agency Tracking Number:
13154
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
520-b Danbury Rd, New Milford, CT, 06776
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Bo-yang Lin
(203) 355-2681
Business Contact:
() -
Research Institution:
n/a
Abstract
WIDESPREAD APPLICATION OF HIGH PERFORMANCE DEVICES BASED ON III-V, IV-IV, OR DIAMOND COMPOUND SEMICONDUCTORS WILL DEPEND ON THE DEVELOPMENT OF MANUFACTURING METHODS. RECENTLY, DR. MAX YODER OF ONR PROPOSED A RADICALLY NEW GROWTH SEQUENCE APPLICABLE TO THE GROUP IV SEMICONDUCTORS IN GENERAL AND TO DIAMOND IN PARTICULAR. FOR DIAMOND, IT IS ANTICIPATED THAT ALTERNATE INTRODUCTION OF CH4 AND CF4 TO THE DIAMOND GROWTH SURFACE WILL PERMIT ATOMIC LAYER EPITAXIAL GROWTH OF DIAMOND. FUNDAMENTAL SURFACE SCIENCE AND CHEMICAL STUDIES ARE REQUIRED TO ESTABLISH THE DETAILS OF THE GROWTH MECHANISMS. IN PHASE I, ISOTOPIC LABELLING EXPERIMENTS WILL BE COMBINED WITH SURFACE SPECTROSCOPY TO UNEQUIVOCALLY ESTABLISH LAYER BY LAYER GROWTH OF DIAMOND. IN PHASE II, THE PROCESS FOR DIAMOND ALE WILL BE OPTIMIZED AND ITS APPLICABILITY TO THE FABRICATION OF ABRUPT P-N JUNCTIONS DEMONSTRATED.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government