BIMETALLIC PRECURSORS FOR CHEMICAL VAPOR DEPOSITION

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$553,000.00
Award Year:
1993
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
15604
Agency Tracking Number:
15604
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
520-b Danbury Road, Danbury, CT, 06776
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Charles P Beetz Jr
Principal Investigator
(203) 355-2681
Business Contact:
() -
Research Institution:
n/a
Abstract
THE NEXT GENERATION OF HIGH POWER, HIGH FREQUENCY ELECTRONIC DEVICE TECHNOLOGY WILL BE BASED ON WIDE BANDGAP SEMICONDUCTOR MATERIALS SUCH AS SIC, GAN AND DIAMOND. OF THESE, SILICON CARBIDE IS THE MOST PROMISING MATERIAL FOR NEAR TERM APPLICATIONS, SINCE ITS PROCESSING SHARES MANY COMMON FEATURES WITH WELL-ESTABLISHED SILICON PROCESSING. TECHNOLOGY HAS BEEN DEMONSTRATED FOR PRODUCING OHMIC AND SCHOTTKY CONTACTS, SHALLOW DOPANTS ARE AVAILABLE FOR BOTH P AND N TYPE MATERIALS, AND P-N JUNCTIONS ARE READILY FABRICATED. A MAJOR DEFICIENCY THAT IS PRESENTLY LIMITING THE ACCEPTABILITY OF SIC AS A SERIOUS MATERIAL SYSTEM FOR HIGH TEMPERATURE, HIGH POWER ELECTRONIC APPLICATIONS IS THE LACK OF A COMMERCIALLY AVAILABLE SOURCE OF SEMICONDUCTOR GRADE SIC WAFERS. ATM PROPOSES A COMMERCIALLY VIABLE APPROACH FOR THE GROWTH OF BULK SINGLE CRYSTAL 6H-SIC INGOTS. THE PROPOSED TECHNOLOGY DEVELOPMENT USES SEVERAL INNOVATIVE APPROACHES TO CONTROL THE RATE OF SUBLIMATION OF SIC FROM A SOLID SOURCE ROD AND TO SEED THE CRYSTAL GROWTH.

* information listed above is at the time of submission.

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