FERROELECTRIC MATERIAL FOR ULSI DEVICES

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 15606
Amount: $500,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1992
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
520-b Danbury Road, Danbury, CT, 06776
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Peter S Kirlin
 Principal Investigator
 (203) 355-2681
Business Contact
Phone: () -
Research Institution
N/A
Abstract
EXPLOITATION IN MICROELECTRONICS OF THE VERY HIGH DIELECTRIC CONSTANTS OF FERROELECTRIC PEROVSKITES SUCH AS BATIO3 AND PZT HAS BEEN LIMITED BY MATERIALS PROCESSING AND COMPATIABILITY PROBLEMS. HIGH QUALITY FERROELECTRIC THIN FILMS HAVE NOT BEEN GROWN AT TEMPERATURES COMPATIABLE WITH STANDARD SI OR GAAS PROCESSING TECHNOLOGIES. A HUGE PAYOFF AWAITS ONE WHO CAN UNLOCK THE POTENTIAL OF FERROELECTRIC PEROVSKITES FOR USE IN THE PRODUCTION OF LOW COST DRAMS. GROWTH TECHNIQUES COMPATIBLE WITH SILICON PROCESSING DEVELOPED AT ATM FOR THE HIGH TEMPERATURE SUPERCONDUCTORS WILL BE APPLIED TO THE DEPOSITION OF BA1-XSRXTIO3. BST HAS BEEN SELECTED FOR DEVELOPMENT FOR DRAM APPLICATIONS BECAUSE SYSTEMATIC VARIATION OF THE BA/SR RATIO OFFERS EXCELLENT CONTROL OVER THE MODULATION OF THE DIELECTRIC CONSTANT (500-1500) AND CONDUCTION PROPERTIES OF THE FERROELECTRIC FILMS. THE SPECIFIC GOAL OF THE PHASE I PROGRAM IS TO DEPOSIT ORIENTED BA1-XSRXTIO3 THIN FILMS ON SI(100) AT TEMPERATURES BELOW 650 DEGREES BY PE-MOCVD. A PROTOTYPE DRAM BASED ON BA1-XSRXTIO3 CAPACITOR STORAGE CELLS WILL BE FABRICATED AND TESTED IN PHASE II.

* Information listed above is at the time of submission. *

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