Modulation-Doped A1 GaN/Gan Heterostructures and Devices on Semi-Insulating SIC Substrates

Award Information
Agency:
Department of Defense
Amount:
$1,900,000.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
1998
Phase:
Phase II
Agency Tracking Number:
18173
Solicitation Topic Code:
N/A
Small Business Information
Advanced Technology
7 Commerce Drive, Danbury, CT, 06810
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Joan Redwing
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract
The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for near term applications since in many ways it be processed like silicon. Several deficiencies presently limit the acceptability of silicon carbide including the commercial availability of semiconductor grade silicon carbide crystals and wafers and the low efficiencies of optoelectronic devices based on this material. Advanced Technology Materials, Inc. has developed a new approach to the growth of silicon carbide crystal which addresses both problems. Successful growth of these crystals will permit the fabrication of extremely efficient and compact solid state UV light sources.

* information listed above is at the time of submission.

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