HTSCs as Electrodes in DRAMs

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$50,000.00
Award Year:
1992
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
18069
Agency Tracking Number:
18069
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7 Commerce Drive, Danbury, CT, 06810
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Jiming Zhang, Phd
(203) 794-1100
Business Contact:
() -
Research Institution:
n/a
Abstract
The continuing drive toward increased circuit densities in dynamic random access memories (DRAMs) has spurred great interest in new dielectric materials that permit greater storage capacitor charge density. Ferroelectrics are particularly attractive because of their intrinsically large dielectric constant, and non-volatile and radiation-hard memory capability. Application of ferroelectrics in microelectronics has been severely limited by materials processing and compability problems. Advanced Technology Materials, Inc., has developed a novel approach to solving these compatibility problems through the utilization of high temperature superconductors (HTSCs) as electrode materials. Their development and subsequent use in DRAMs will allow significant increase in memory storage while affording designers maximum flexibility in device configuration.

* information listed above is at the time of submission.

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