Organoerbium Source Reagents for MOCVD of Erbium-Containing Alloys

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$49,320.00
Award Year:
1992
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
18136
Agency Tracking Number:
18136
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Advanced Technology (Currently Advanced Technologies/Laboratories Intl)
7 Commerce Drive, Danbury, CT, 06810
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Douglas Gordon
(203) 794-1100
Business Contact:
() -
Research Institution:
n/a
Abstract
The use of optoelectronic materials, such as gallium arsenide, in applications ranging from fiber optics to solid-state lasers has been growing rapidly. The fabrication of these materials requires exacting control over material composition, purity, uniformity and production rate. Typically these materials contain small amounts of rare earth dopants or impurities which are designated to enhance the optoelectronic effect. Advanced Technology Materials, Inc. has designed novel precursors for these rare earth dopants. These new "source reagents" should facilitate the manufacturing process by increasing the efficiency of incorporation of dopants into optoelectronic materials effectively reducing cost and increasing quality at the same time.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government