Negative Electron Affinity Diamond Vacuum Collector Transistor

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 19679
Amount: $58,463.00
Phase: Phase I
Program: SBIR
Awards Year: 1993
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
7 Commerce Drive, Danbury, CT, 06810
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 George Brandes
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract
SEMICONDUCTING DIAMOND HAS MANY NOVEL PROPERTIES, MOST NOTABLY A STABLE NEGATIVE ELECTRON AFFINITY SURFACE. CONDUCTION BAND ELECTRONS ARE READILY EMITTED FROM A NEGATIVE ELECTRON AFFINITY (NEA) MATERIAL BECAUSE THE BULK CONDUCTION BAND LIES ABOVE THE VACUUM LEVEL. IN THE PHASE I PROGRAM WE WILL CONSTRUCT A NEGATIVE ELECTRON AFFINITY DIAMOND VACUUM COLLECTOR TRANSISTOR AND INVESTIGATE THE PERFORMANCE OF THE DEVICE. THE DIAMOND TRANSISTOR IS EXPECTED TO HAVE EXCEPTIONAL HIGH FREQUENCY AND TEMPERATURE PERFORMANCE. PHASE II WILL EXTEND THE PHASE I PROGRAM TO INCLUDE FULL DEVICE DESIGN, FABRICATION, AND TESTING. PHASE III WE WILL EXPECT RAPID COMMERCIALIZATION OF THE DEVICES IN MICROWAVE COMMUNICATIONS, FLAT PANEL DISPLAYS, AND ULTRA FAST SWITCHES.

* Information listed above is at the time of submission. *

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government