Negative Electron Affinity Diamond Vacuum Collector Transistor

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$58,463.00
Award Year:
1993
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
19679
Agency Tracking Number:
19679
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Advanced Technology Materials (Currently Advanced Technologies/Laboratories Intl)
7 Commerce Drive, Danbury, CT, 06810
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
George Brandes
(203) 794-1100
Business Contact:
() -
Research Institution:
n/a
Abstract
SEMICONDUCTING DIAMOND HAS MANY NOVEL PROPERTIES, MOST NOTABLY A STABLE NEGATIVE ELECTRON AFFINITY SURFACE. CONDUCTION BAND ELECTRONS ARE READILY EMITTED FROM A NEGATIVE ELECTRON AFFINITY (NEA) MATERIAL BECAUSE THE BULK CONDUCTION BAND LIES ABOVE THE VACUUM LEVEL. IN THE PHASE I PROGRAM WE WILL CONSTRUCT A NEGATIVE ELECTRON AFFINITY DIAMOND VACUUM COLLECTOR TRANSISTOR AND INVESTIGATE THE PERFORMANCE OF THE DEVICE. THE DIAMOND TRANSISTOR IS EXPECTED TO HAVE EXCEPTIONAL HIGH FREQUENCY AND TEMPERATURE PERFORMANCE. PHASE II WILL EXTEND THE PHASE I PROGRAM TO INCLUDE FULL DEVICE DESIGN, FABRICATION, AND TESTING. PHASE III WE WILL EXPECT RAPID COMMERCIALIZATION OF THE DEVICES IN MICROWAVE COMMUNICATIONS, FLAT PANEL DISPLAYS, AND ULTRA FAST SWITCHES.

* information listed above is at the time of submission.

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