Doped Silicide OHMIC Contacts To Silicon Carbide

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$750,000.00
Award Year:
1995
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
19694
Agency Tracking Number:
19694
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Advanced Technology Materials (Currently Advanced Technologies/Laboratories Intl)
7 Commerce Drive, Danbury, CT, 06810
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Michael A. Tischler
(203) 794-1100
Business Contact:
() -
Research Institution:
n/a
Abstract
OHMIC CONTACTS ARE KEY TO THE IMPLEMENTATION OF SILICON CARBIDE (SIC) HIGH POWER, HIGH TEMPERATURE DEVICES. TO DATE, CONTACTS TO SiC MADE USING CONVENTIONAL TECHNIQUES HAVE DEMONSTRATED NEITHER LOW CONTACT RESISTANCES NOR LONG TERM STABILITY. IN PHASE I WE WILL DEVELOP LOW RESISTANCE SILICIDE BASED OHMIC CONTACTS SPECIFICALLY AIMED AT SiC HIGH TEMPERATURE, HIGH POWER DEVICES. CONTACTS WILL BE FABRICATED USING A NOVEL DOPING TECHNIQUES TO HEAVILY DOPE THE SEMICONDUCTOR-SILICIDE INTERFACE AND VIA A UNIQUE SILICIDE FORMATION PROCESS. CONTROLLED FORMATION OF SILICIDES WILL ELIMINATE THE PROBLEMS OF EXCESS CARBON AND CARBIDE FORMATION AT THE CONTACT INTERFACE. IN PHASE II, WE WILL EVALUATE THE LONG TERM ELECTRICAL AND STRUCTURAL STABILITY OF THE CONTACTS IN HIGH POWER, HIGH TEMPERATURE DEVICES. IN PHASE III, SPECIFIC DOD AND COMMERCIAL DEVICES WILL BE TARGETED FOR MANUFACTURE.

* information listed above is at the time of submission.

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