Doped Silicide OHMIC Contacts To Silicon Carbide

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 19694
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1995
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
7 Commerce Drive, Danbury, CT, 06810
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Michael A. Tischler
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract
OHMIC CONTACTS ARE KEY TO THE IMPLEMENTATION OF SILICON CARBIDE (SIC) HIGH POWER, HIGH TEMPERATURE DEVICES. TO DATE, CONTACTS TO SiC MADE USING CONVENTIONAL TECHNIQUES HAVE DEMONSTRATED NEITHER LOW CONTACT RESISTANCES NOR LONG TERM STABILITY. IN PHASE I WE WILL DEVELOP LOW RESISTANCE SILICIDE BASED OHMIC CONTACTS SPECIFICALLY AIMED AT SiC HIGH TEMPERATURE, HIGH POWER DEVICES. CONTACTS WILL BE FABRICATED USING A NOVEL DOPING TECHNIQUES TO HEAVILY DOPE THE SEMICONDUCTOR-SILICIDE INTERFACE AND VIA A UNIQUE SILICIDE FORMATION PROCESS. CONTROLLED FORMATION OF SILICIDES WILL ELIMINATE THE PROBLEMS OF EXCESS CARBON AND CARBIDE FORMATION AT THE CONTACT INTERFACE. IN PHASE II, WE WILL EVALUATE THE LONG TERM ELECTRICAL AND STRUCTURAL STABILITY OF THE CONTACTS IN HIGH POWER, HIGH TEMPERATURE DEVICES. IN PHASE III, SPECIFIC DOD AND COMMERCIAL DEVICES WILL BE TARGETED FOR MANUFACTURE.

* Information listed above is at the time of submission. *

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