Low Valent Titanium Source Reagents for MOCVD of Titanium Nitride

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$60,000.00
Award Year:
1993
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
19619
Agency Tracking Number:
19619
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7 Commerce Drive, Danbury, CT, 06810
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Douglas Gordon
(203) 794-1100
Business Contact:
() -
Research Institute:
n/a
Abstract
TITANIUM NITRIDE (TiN) IS RAPIDLY BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMs, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. TYPICALLY, THIN FILMS OF TiN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) WILL BE THE MANUFACTURING OF CHOICE. UNFORTUNATELY, NO TiN PRECURSORS EXIST THAT ALLOW CVD OF TiN AT LOW TEMPERATURES WITHOUT CONTAMINATION PROBLEMS. IN PHASE I ATM PROPOSES TO DETERMINE THE FEASIBILITY OF DESIGNING NOVEL SOURCE REAGENTS THAT ALLOW THE DEPOSITION OF TiN BY CVD TEMPERATURES BELOW 500 C DEGREE WITHOUT CHLORINE, CARBON OR PARTICULATE CONTAMINATION. THE IDENTIFICATION OF SUCH PRECURSORS WOULD FOR THEIR DEMONSTRATION IN FULL SCALE MEMORY DEVICE FABRICATION IN PHASE II AND THEIR RAPID COMMERCIALIZATION IN PHASE III.

* information listed above is at the time of submission.

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