Low Valent Titanium Source Reagents for MOCVD of Titanium Nitride

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 19619
Amount: $60,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1993
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
7 Commerce Drive, Danbury, CT, 06810
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Douglas Gordon
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract
TITANIUM NITRIDE (TiN) IS RAPIDLY BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMs, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. TYPICALLY, THIN FILMS OF TiN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) WILL BE THE MANUFACTURING OF CHOICE. UNFORTUNATELY, NO TiN PRECURSORS EXIST THAT ALLOW CVD OF TiN AT LOW TEMPERATURES WITHOUT CONTAMINATION PROBLEMS. IN PHASE I ATM PROPOSES TO DETERMINE THE FEASIBILITY OF DESIGNING NOVEL SOURCE REAGENTS THAT ALLOW THE DEPOSITION OF TiN BY CVD TEMPERATURES BELOW 500 C DEGREE WITHOUT CHLORINE, CARBON OR PARTICULATE CONTAMINATION. THE IDENTIFICATION OF SUCH PRECURSORS WOULD FOR THEIR DEMONSTRATION IN FULL SCALE MEMORY DEVICE FABRICATION IN PHASE II AND THEIR RAPID COMMERCIALIZATION IN PHASE III.

* Information listed above is at the time of submission. *

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