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Ferroelectric Capacitors for Pulse Power Electronics

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 19621
Amount: $753,020.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1997
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
7 Commerce Drive, Danbury, CT, 06810
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Gregory Stauf, Phd
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract
HIGH-DENSITY ENERGY STORAGE AND FAST DISCHARGE WILL BE CRITICAL IN A VARIETY OF HIGH POWER AEROSPACE APPLICATIONS. CAPACITORS ARE IDEAL FOR THESE PURPOSES, AS WELL AS FOR POWER CONDITIONING AND FILTERING. UNFORTUNATELY, BULK POWDER-BASED DIELECTRICS USED IN CAPACITORS HAVE SEVERE LIMITATIONS, ESPECIALLY THE HIGH NUMBER OF SHORT-INDUCING DEFECTS CAUSED BY POOR CONTROL OF MATERIAL PROPERTIES IN CERAMIC FABRICATION PROCESSES. WE PROPOSE TO LEAPFROG CURRENT CAPACITOR TECHNOLOGY THROUGH THE CONTROLLED GROWTH OF HIGH DIELECTRIC CONSTANT AND HIGH DIELECTRIC STRENGTH THIN FILMS ON MECHANICALLY STRONG SUBSTRATES. HIGH RATE MOCVD IS PROPOSED AS A GROWTH METHOD, SIMILAR TO WHAT IS CURRENTLY USED IN INDUSTRY TO MAKE CM THICK ZnSe IR WINDOWS. IN PHASE I, METHODOLOGY WILL BE DEVELOPED TO DEPOSIT THICK Ba(x)Sr(1-x)TiO(3) FILMS ON CONDUCTING OXIDE ELECTRIDES FOR USE IN HIGH ENERGY DENSITY CAPACITORS. IN PARTICULAR THICK FILMS OF Ba(0.5)Sr(0.5)TiO(3), WHICH HAS DEMONSTRATED DIELECTRIC CONSTANTS GREATER THAN 800 WITH BREAKDOWN VOLTAGES OF 1.5-2 MV/cm (45-60 kV/MIL), WILL BE GROWN. IN PHASE II, THE MOCVD DEPOSITION PROCESS WILL BE SCALED UP TO COMMERCIAL VOLUMES, MULTILAYERS AND ELECTRODING EXAMINED, AND PARTNERSHIPS ESTABLISHED TO VALIDATE THIS TECHNOLOGY IN THE MARKETPLACE THROUGH THE CONSTRUCTION OF PROTOTYPE HIGH ENERGY DENSITY CAPACITORS.

* Information listed above is at the time of submission. *

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