NOVEL SOURCES FOR TITANIUM NITRIDE CHEMICAL VAPOR DEPOSITION (CVD)

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$50,000.00
Award Year:
1993
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
21562
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Advanced Technology Materials
7 Commerce Dr, Danbury, CT, 06810
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Walter P Kosar/douglas Go
(203) 794-1100
Business Contact:
() -
Research Institution:
n/a
Abstract
TITANIUM NITRIDE (TIN) IS BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMS, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. THIN FILMS OF TIN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) IS THE MANUFACTURING METHOD OF CHOICE. NO TIN PRECURSORS EXIST THAT ALLOW CVD OF TIN AT LOW TEMPERTUES WITHOUT CONTAMINATION PROBLEM. RESEARCHERS ARE DETERMINING THE FEASIBILITY OF DESIGNING NOVEL UNIMOLECULAR SOURCE REAGENTS THAT ALLOW THE DEPOSITION OF TIN BY CVD AT TEMPERATURES BELOW 500 DEGREES CENTIGRADE WITHOUT CHLORINE, CARBON, OR PARTICULATE CONTAMINATION.

* information listed above is at the time of submission.

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