BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 25584
Amount: $99,995.00
Phase: Phase I
Program: SBIR
Awards Year: 1994
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Advanced Technology Materials
7 Commerce Drive, Danbury, CT, 06810
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Michael Tischler, Phd
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract
We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-Packard. In Phase III, the LEDs will be commercialized and the technology will be extended to GaN based electronics and lasers.

* information listed above is at the time of submission.

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