BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES
Department of Defense
Missile Defense Agency
Agency Tracking Number:
Solicitation Topic Code:
Small Business Information
Advanced Technology Materials
7 Commerce Drive, Danbury, CT, 06810
Socially and Economically Disadvantaged:
Michael Tischler, Phd
AbstractWe propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-Packard. In Phase III, the LEDs will be commercialized and the technology will be extended to GaN based electronics and lasers.
* information listed above is at the time of submission.