BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,995.00
Award Year:
1994
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
25584
Agency Tracking Number:
25584
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Advanced Technology Materials (Currently Advanced Technologies/Laboratories Intl)
7 Commerce Drive, Danbury, CT, 06810
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Michael Tischler, Phd
(203) 794-1100
Business Contact:
() -
Research Institution:
n/a
Abstract
We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-Packard. In Phase III, the LEDs will be commercialized and the technology will be extended to GaN based electronics and lasers.

* information listed above is at the time of submission.

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