HIGH POWER MOS TRANSISTOR
Department of Defense
Missile Defense Agency
Agency Tracking Number:
Solicitation Topic Code:
Small Business Information
Advanced Technology Materials
7 Commerce Drive, Danbury, CT, 06810
Socially and Economically Disadvantaged:
AbstractThe ability to control large amounts of power (1-150kW) is necessary in applications ranging from aerospace to consumer electronics to industrial power systems and transportation. In order for silicon and gallium arsenide devices to meets such high power densities, tens of devices must be combined to meet the voltage and current requirements. Power combining networks, extra heatsinking and sophisticated control electronics increase costs and decrease the efficiency of power conversion and control. By virtue of their electronic, thermal, and mechanical properties, silicon carbide semiconductors will dramatically decrease the cost and improve the efficiency of power control circuits. Critical to the implementation of SiC power devices is the ability to control the oxide/semiconductor interface.
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