HIGH POWER MOS TRANSISTOR

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 25576
Amount: $60,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1994
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
7 Commerce Drive, Danbury, CT, 06810
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Seungmoo Choi
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract
The ability to control large amounts of power (1-150kW) is necessary in applications ranging from aerospace to consumer electronics to industrial power systems and transportation. In order for silicon and gallium arsenide devices to meets such high power densities, tens of devices must be combined to meet the voltage and current requirements. Power combining networks, extra heatsinking and sophisticated control electronics increase costs and decrease the efficiency of power conversion and control. By virtue of their electronic, thermal, and mechanical properties, silicon carbide semiconductors will dramatically decrease the cost and improve the efficiency of power control circuits. Critical to the implementation of SiC power devices is the ability to control the oxide/semiconductor interface.

* Information listed above is at the time of submission. *

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