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Efficient Dopant Activation In P-type III-V Nitrides

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 26231
Amount: $50,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1994
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
7 Commerce Drive
Danbury, CT 06810
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Michael Tischler
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract

THE AVAILABILITY OF EFFICIENT BLUE LIGHT EMITTERS WOULD BREAK OPEN COMMERCIAL AND DEFENSE MARKETS IN FULL COLOR DISPLAYS AND HIGH DENSITY OPTICAL STORAGE SYSTEMS. NITRIDE-BASED DEVICES HAVE THE GREATEST POTENTIAL AS HIGH EFFICIENCY EMITTERS BECAUSE OF THEIR DIRECT BANDGAP AND CONVENIENT HETEROSTRUCTURES SYSTEM. HOWEVER, THE LACK OF OF SUITABLE P-TYPE DOPING TECHNOLOGY HAS GREATLY HINDERED DEVELOPMENT OF THESE MATERIALS. IN PHASE I WE WILL DEMONSTRATE REPRODUCIBLE, EFFICIENT P-TYPE DOPING TECHNOLOGY FOR III-V NITRIDES. OUR APPROACH ADDRESSES THE TWO MAIN FACTORS AFFECTING P-TYPE DOPING, STRUCTURAL FACTORS RESULTING FROM LATTICE MISMATCH AND CHEMICAL FACTORS DUE TO DOPANT INTERACTION IN THE SOLID GROWTH. ATM'S UNIQUE EXPERTISE IN SUBSTRATES AND MOCVD PROCESSES PROVIDE SOLUTIONS TO THESE PROBLEMS. THE PHASE II PROGRAM WILL UTILIZE THESE TECHNIQUES TO PRODUCE EFFICIENT BLUE LEDs AND LASERS FOR COMMERCIALIZATION IN PHASE III.

* Information listed above is at the time of submission. *

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