DEFECT REDUCTION IN BULK 6H-SIC

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 27339
Amount: $300,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1997
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Advanced Technology Materials
7 Commerce Dr, Danbury, CT, 06810
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Nicholas I Buchan
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract
DUE TO ITS UNIQUE PROPERTIES AND ITS ABILITY TO BE PROCESSED ANALOGOUSLY TO SILICON, SILICON CARBIDE (SIC) WILL BE AN IMPORTANT HIGH TEMPERATURE, HIGH POWER, AND HIGH FREQUENCY ELECTRONIC MATERIAL. THE BARRIER TO THIS DEVELOPING TECHNOLOGY WAS THE AVAILABILITY OF 6H-SIC SUBSTRATES. HOWEVER, THESE SUBSTRATES ARE NOW PRODUCED IN EVER-INCREASING QUANTITIES AND THE NEW BARRIER IS THE QUALITY OF THESE SUBSTRATES. SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHY (SWBXT), AN INNOVATIVE AND NON-DESTRUCTIVE TECHNIQUE IN WHICH LOCAL DIFFERENCES IN DIFFRACTING POWER GIVE RISE TO IMAGE CONTRAST, IS UNIQUELY SUITED FOR DEFECT CHARACTERIZATION IN SIC. THE COMPREHENSIVE AND NONDESTRUCTIVE NATURE OF THIS TECHNIQUE MAKES IT AN OPTIMAL TOOL FOR RESEARCH AS WELL AS FOR QUALITY CONTROL IN A PRODUCTION ENVIRONMENT.

* information listed above is at the time of submission.

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government