DEFECT REDUCTION IN BULK 6H-SIC

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$300,000.00
Award Year:
1997
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
27339
Agency Tracking Number:
27339
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7 Commerce Dr, Danbury, CT, 06810
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Nicholas I Buchan
(203) 794-1100
Business Contact:
() -
Research Institute:
n/a
Abstract
DUE TO ITS UNIQUE PROPERTIES AND ITS ABILITY TO BE PROCESSED ANALOGOUSLY TO SILICON, SILICON CARBIDE (SIC) WILL BE AN IMPORTANT HIGH TEMPERATURE, HIGH POWER, AND HIGH FREQUENCY ELECTRONIC MATERIAL. THE BARRIER TO THIS DEVELOPING TECHNOLOGY WAS THE AVAILABILITY OF 6H-SIC SUBSTRATES. HOWEVER, THESE SUBSTRATES ARE NOW PRODUCED IN EVER-INCREASING QUANTITIES AND THE NEW BARRIER IS THE QUALITY OF THESE SUBSTRATES. SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHY (SWBXT), AN INNOVATIVE AND NON-DESTRUCTIVE TECHNIQUE IN WHICH LOCAL DIFFERENCES IN DIFFRACTING POWER GIVE RISE TO IMAGE CONTRAST, IS UNIQUELY SUITED FOR DEFECT CHARACTERIZATION IN SIC. THE COMPREHENSIVE AND NONDESTRUCTIVE NATURE OF THIS TECHNIQUE MAKES IT AN OPTIMAL TOOL FOR RESEARCH AS WELL AS FOR QUALITY CONTROL IN A PRODUCTION ENVIRONMENT.

* information listed above is at the time of submission.

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