Multi-Spectral Semiconductor Ultraviolet Detector
Department of Defense
Missile Defense Agency
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Small Business Information
Advanced Technology Materials
7 Commerce Dr, Danbury, CT, 06810
Socially and Economically Disadvantaged:
AbstractWe propose to demonstrate the feasibility of solar-blind, multi-spectral III-V nitride UV detectors which can meet the requirements of applications in both the military and commercial sectors (missile threat warning, UV search and track, environmental monitoring in gas turbines, and general flame detection). A novel aspect of our approach is the use of SiC as a substrate for these devices, which will both improve the quality of the nitride layers used in the detector, as well as permit on-chip integration of electronics and LEDs to increase sensor functionality. The advantage of direct semiconductor detectors over other detection methods include increased performance, lower cost, smaller size and weight, increased reliability and reduced temperature sensitivity. Phase I will develop UV detectors based on (In,Ga)N that are sensitive to radiation in the 200-300nm and 310-390nm range. Phase II will extend this work to monolithically integrate an array of multi-spectral detectors on a single chip and examine integration of sensors and electronics on the same chip. The development of GaN-based UV detectors and arrays will greatly simplify UV monitoring in a wide range of applications including fire detection, pollution monitoring, solar UV monitoring, burner monitoring in gas turbines, and flame detection in furnaces and for fire detection. GaN materials and devices also has great potential for use in full color displays and high temperature.
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