Stress Analyzer for Microelectronic Devices

Award Information
Agency:
Department of Defense
Branch:
Air Force
Amount:
$750,000.00
Award Year:
1996
Program:
SBIR
Phase:
Phase II
Contract:
N/A
Agency Tracking Number:
27986
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Advanced Technology Materials
7 Commerce Drive, Danbury, CT, 06810
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 David Kurtz
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract
Multilayer thin films deposited onto Si wafers often exhibit high residual stresses during processing, leading to structural failure and/or electrical breakdown. Traditional scanning x-ray diffraction provides an accurate measurement of complex stress behavior in multilayer structures, but is difficult to carry out on a routine basis. Laser deflection methods are easy to perform but provide a limited macroscopic indication of only planer stress in a single layer. ATM, in conjunction with Penn State University and Proto Manufacturing, proposes to develop a routine wafer stress mapping instrument that offers comprehensive analysis of x-ray diffraction combined with the simplicity/mapping capability of laser deflection. The proposed system utilizes a compact, non-moving fiber-optic detector, a small (only 200 watt) x-ray source, and single exposure measuring technique. Proposed system is based on a commercially proven XRD stress system for bulk metals stress analysis. Automated mapping and thermal cycling capabilities will be included in the system. Successful completion of Phase 1 program will result in a fully operational stress mapping system to be marketed and manufactured for commercial sale during Phase II.

* information listed above is at the time of submission.

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