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Cost Effective Copper CVD Precursors for ULSI Devices

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: N/A
Agency Tracking Number: 26465
Amount: $97,626.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1994
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
7 Commerce Drive
Danbury, CT 06810
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Douglas Gordon
 (203) 794-1100
Business Contact
Phone: () -
Research Institution

Chemical vapor deposition (CVD) of copper for vias and interconnects is critical to manufacture of next generation high speed ULSI devices and has been extensively investigated over the last few years. Although considerable progress has been made commercialization of this technology is currently impossible due to the high cost of the source reagents. In this Phase I program Advanced Technology Materials, Inc.(ATM) will investigate three novel classes of copper precursors specifically designed for synthesis from inexpensive feedstocks. In Phase II the molecular structure of the compounds will be optimized and large scale synthetic methods will be developed. In addition we will collaborate with a major semiconductor manfacturer to integrate the source reagents and ATM's proprietary liquid delivery technology into a commercial CVD reactor. This will lead in Phase III to introduction of a commercial manufacturing process for CVD copper. Anticipated Benefits: Chemical vapor deposition of copper is on the critical pathway for next generation high speed logic devices. The identification of cost effective Precursors for this process will have a profound and immediate effect on logic device fabrication.

* Information listed above is at the time of submission. *

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