Isolation Techniques for High Temperature Integrated Sensor/Electronics Applications

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: N/A
Agency Tracking Number: 26695
Amount: $99,999.00
Phase: Phase I
Program: SBIR
Awards Year: 1994
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Advanced Technology Materials
7 Commerce Drive, Danbury, CT, 06810
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Nicholas Buchan
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract
Sensors and electronics will become increasingly pervassive as weight, fuel efficiency, cost and emissions requirements put increasing demands on vehicle technology. The development of high temperture, integrated sensors and electronics is necessary to cost-effectively address both civilian and military needs. The arrival of single crystal silicon carbide substrates and high quality epitaxial layers make SiC the primary candidate for these dual-use applications based on its material techniques applied to silicon carbide, such as junction isolation, greatly complicate circuit fabrication. In this Phase I we will instead take a unique approach with SiC, previously applied to III-V materials, of controlling deep and shallow level impurities to produce a semi-insulating substrate. This Phase I program will also represent the first rigorous correlation of the electrical characteristics of deep and shallow levels attributable to known atomic impurity concentrations. ATM is uniquely suited to carry out this investigation based on its wide range of bulk and thin film SiC growth and characterization experience. In Phase II this work will be extended to produce improved semi-insulating substrates which will be used to fabricate prototype SiC integrated circuits. Anticipated Benefits: SiC electronics will enable devices providing new functionality that cannot be matched by Si or GaAs devices. Advantages will include high temperature and power operation and reduced volume, weight and parts count. Applications inlcude vehicle technology, avionics, motor controls, power control, high frequency power generation and blue LEDs.

* information listed above is at the time of submission.

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