SECOND GENERATION LEAD CVD PRECURSORS FOR PBTIO3

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$300,000.00
Award Year:
1997
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
27326
Agency Tracking Number:
27326
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7 Commerce Dr, Danbury, CT, 06810
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Douglas C Gordon
(203) 794-1100
Business Contact:
() -
Research Institution:
n/a
Abstract
CHEMICAL VAPOR DEPOSITION (CVD) OF LEAD-BASED FERROELECTRICS SUCH AS LEAD TITANATE, LEAD ZIRCONATE TITANATE (PZT), AND LEAD LANTHANUM ZIRCONATE TITANATE (PLZT), IS THE MOST PROMISING MANUFACTURING METHOD FOR A WIDE VARIETY OF NEXT GENERATION ELECTRONIC DEVICES INCLUDING RADIATION-HARD NON-VOLATILE MEMORIES, ELECTRO-OPTIC SPATIAL LIGHT MODULATORS, PIEZOELECTRIC ACTUATORS, AND PYROELECTRIC INFRARED DETECTORS. THE USE OF THIS TECHNIQUE IN A MANUFACTURING ENVIRONMENT IS CURRENTLY LIMITED BY THE INADEQUACY OF CURRENT SOURCE REAGENTS (LOW VOLATILITY OR HIGH TOXICITY). RESEARCHERS ARE INVESTIGATING NEW LEAD PRECURSORS SPECIFICALLY DESIGNED TO MEET BOTH FILM GROWTH AND SAFETY REQUIREMENTS.

* information listed above is at the time of submission.

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