Lattice Matched III-V Nitride Heterostructures

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 32041
Amount: $60,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1996
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Advanced Technology Materials
7 Commerce Drive, Danbury, CT, 06810
Duns: N/A
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Joan Redwing
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
The III-V nitrides have recently emerged as the primary material system for UV/blue light emitters. Higher bandgap energy (Al,Ga)N alloys are currently employed as cladding layers for GaN and (In,Ga)N active region LEDs and laser structures. Lattice mismatch between the cladding and active regions, however, restricts both the thickness and composition of the layers which in turn limits the operating efficiency of the devices. This is particularly problematic for the fabrication of high efficiency laser diodes. (Al,In)N is an alloy system which offers the potential to fabricate completely lattice matched III-V nitride heterostructures. There has been little work to date on the growth of high quality (Al,In)N and, as a result, many of the fundamental properties of this alloy system, such as bandgap energy, have never been experimentally verified. In this Phase I program, we will examine the feasibility of growing (Al,In)N alloys and (Al,Ga)N/GaN heterostructures by metal organic vapor phase epitaxy (MOVPE). This technology will serve as the foundation for high efficiency UV lasers to be fabricated in Phase II. Phase III will consist of further development and commercialization of these devices.

* information listed above is at the time of submission.

Agency Micro-sites

US Flag An Official Website of the United States Government