High Temperature SiC Power MOSFETs

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$60,000.00
Award Year:
1996
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
32004
Agency Tracking Number:
32004
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
7 Commerce Drive, Danbury, CT, 06810
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Philip S. Chen
(203) 794-1100
Business Contact:
() -
Research Institution:
n/a
Abstract
Large power handling systems of 1KW to 150KW are required in a many applications ranging from aerospace to consumer electronics to industrial power systems and transportation. Conventional electronic systems, based on silicon or gallium arsenide devices, require a large number of devices enhanced with extra heat sinking and sophisticated control systems to ensure synchronous operation. The extra components increase system weight and size, reduce reliability and can also reduce efficiency. Because of its unique properties, SiC is an ideal material for high temperature and power applications. Its characteristics enable device operation at high temperatures and in high power regimes inaccessible to other semiconductors. In this Phase I program we will develop thin, high integrity device quality oxides for use in SiC high power MOSFETs. The work will focus on the growth of low defect density interfaces by rigorous control of the oxide formation. Success will lead to the design and fabrication of high power, high temperature SiC MOSFETs in Phase II. In Phase III, commercial power MOSFETs as well as analog IC's will be targeted for manufacture.

* information listed above is at the time of submission.

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