High Temperature III-V Nitride RF Electronics

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$749,074.00
Award Year:
1998
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
36221
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Advanced Technology
7 Commerce Drive, Danbury, CT, 06810
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Joan M. Redwing
(203) 794-1100
Business Contact:
() -
Research Institution:
n/a
Abstract
The III-V nitrides, (Al, In, Ga)N, are promising materials for high temperature, high power and high frequency devices due to the wide bandgaps, high electron saturation velocity and high electronic mobility transistor (HEMT) structures available in this alloy system. These devices would find wide-spread commercial use as power amplifiers in base station transmitters for personal communications an din military phased-array radar systems. A1GaN / GaN HEMTs on sapphire subtrates with promising DC and microwave characteristics have recently been demonstrated but further work is needed to develop devices suitable for high temperatures. The goal of this program is to develop AlGaN / GaN HEMTs capable of sustained high power operation. SiC substrates will be employed to improve heat spreading in the device and thermally stable silicides will be developed for the gate contact metallurgy. In Phase I, we will fabricate silicide Schottky contacts to AlGaN test structures and determine the effect of AlGaN composition, doping and surface damage on the barrier height. This thermally stable contact technology will be incorporated into AlGaN / GaN HEMTs in Phase II leading to the production of robust, high performance RF power devices.

* information listed above is at the time of submission.

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