Novel Polishing and Reactor Technologies for SiC Epitaxial Growth

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 35843
Amount: $1,000,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1998
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Advanced Technology
7 Commerce Drive, Danbury, CT, 06810
Duns: N/A
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Nabila Baba-ali
 (203) 794-1100
Business Contact
Phone: () -
Research Institution
N/A
Abstract
Commercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ surface preparation. ,Via a combination of mechanical and photoelectrochemical polishing methods for n-type SiC substrate, we will show that lower defect density epitaxial silicon carbide can be achieved. The new full wafer technique will remove surface and sub-surface damage introduced during sawing and polishing as well as chemical contamination that contribute to epitaxial layer defects. Reduction of epi-layer defects will lead to both improved device performance and increased manufacturing yields. In Phase II we will optimize surface preparation work for both 4H-SiC and 6H-SiC substrates based on in-house and customer epi results. In Phase III the protocol will be introduced into our substrate manufacturing process. The development of a commercially viable method for the surface preparation of SiC substrates will have a direct impact on removing unwanted surface morphological features likely to hinder device performance and yield. Our ability to produce epi-ready specular substrates will not only allow faster progress on the device research front but will also result in a highly desirable commercial product.

* information listed above is at the time of submission.

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