Epi-ready SiC Substrates
Department of Defense
Missile Defense Agency
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Small Business Information
Advanced Technology Materials
7 Commerce Drive, Danbury, CT, 06810
Socially and Economically Disadvantaged:
AbstractCommercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ surface preparation. ,Via a combination of mechanical and photoelectrochemical polishing methods for n-type SiC substrate, we will show that lower defect density epitaxial silicon carbide can be achieved. The new full wafer technique will remove surface and sub-surface damage introduced during sawing and polishing as well as chemical contamination that contribute to epitaxial layer defects. Reduction of epi-layer defects will lead to both improved device performance and increased manufacturing yields. In Phase II we will optimize surface preparation work for both 4H-SiC and 6H-SiC substrates based on in-house and customer epi results. In Phase III the protocol will be introduced into our substrate manufacturing process. The development of a commercially viable method for the surface preparation of SiC substrates will have a direct impact on removing unwanted surface morphological features likely to hinder device performance and yield. Our ability to produce epi-ready specular substrates will not only allow faster progress on the device research front but will also result in a highly desirable commercial product.
* information listed above is at the time of submission.