ARRAYS

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$49,500.00
Award Year:
1986
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
3601
Agency Tracking Number:
3601
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Advanced Device Technology Inc (Currently ADVANCED DEVICE TECHNOLOGY, INC.)
3 Budway - Unit 29, Nashua, NH, 03063
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
DR PETER J KANNAM
(603) 886-4943
Business Contact:
() -
Research Institution:
n/a
Abstract
IMPROVED PROCESSING METHODS FOR THE MANUFACTURING OF HGCDTE INFRARED DETECTORS ON EPITAXIAL MATERIAL IS ADDRESSED IN THIS PROPOSAL. THE GOAL OF PHASE I OF THE PROGRAM IS TO DEVELOP PROCESSING TECHNIQUES ADEQUATE FOR THE PRODUCTION OF 64 X 64 ELEMENT FACAL PLANE ARRAYS. THE DEVICE IS DESIGNED TO SHOW PERFORMANCE LEVEL AT AN ORDER OF MAGNITUDE HIGHER THAN THAT CURRENTLY ACHIEVED. THIS IS ACCOMPLISHED BY INTRODUCING NEW DESIGN FEATURES SUCH AS MULTIPLE LAYER EPITAXIAL STRUCTURE, DOUBLE LAYER SURFACE PASSIVATION, AND TRI-METAL CONTACT SCHEME. THE PRODUCTION COST IS EXPECTED TO BE 50% LOWER THAN THE EXISTING TECHNOLOGY, DUE TO THE ELIMINATION OF SEVERAL PROCESS STEPS THAT ARE DETRIMENTAL TO THE DEVICE PERFORMANCE. THE DETECTOR IS DESIGNED TO GIVE IMPROVED STABILITY AND THERMAL DISSIPATION DUE TO THE ABSENCE OF EPOXY BONDING LAYER BETWEEN THE DETECTOR ARRAY AND THE SUBSTRATE MATERIAL.

* information listed above is at the time of submission.

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