III-N TECHNOLOGY, INC.

Company Information

Company Name
III-N TECHNOLOGY, INC.
Address
4627 5th Street
Lubbock, TX, 79416 4727
Phone
1 785-341-4484
URL
n/a
DUNS
17213773
Number of Employees
7
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
Y

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$339,204.00
4
SBIR Phase II
$1,623,205.00
3
STTR Phase I
$300,000.00
3
Chart code to be here

Award List

  1. III-nitride 1.5 Micron Photonic Devices on Si Substrates

    Amount: $100,000.00

    Research in silicon photonics has received much attention in recent years for its potential to utilize well developed silicon processing technology. A broad range of linear and nonlinear silicon photo ...

    STTR Phase I 2010 ArmyDepartment of Defense
  2. Detection of foreign materials in prepregs

    Amount: $99,204.00

    The research proposed here is built on the recent successful fabrication of the first electrically-pumped III-nitride micro-size LED, micro-size LED arrays, and waveguides by the principal investigato ...

    SBIR Phase I 2001 NavyDepartment of Defense
  3. III-Nitride Integrated Micro-Cavity Photonic Devices

    Amount: $425,533.00

    "The research proposed here is built on the promising results obtained in the Phase I project. During Phase I research, we have further improved blue micro-size light emitter output power efficiencie ...

    SBIR Phase II 2002 NavyDepartment of Defense
  4. High Power III-Nitride Heterojunction Field-Effect Effect Transistor Development

    Amount: $70,000.00

    The research proposed here is built on the recent successful fabrication of metal oxide semiconductor heterjunction field effect transistors (MOS-HFETs) based on AlGaN/GaN heterostructures with very h ...

    SBIR Phase I 2003 Missile Defense AgencyDepartment of Defense
  5. SBIR Phase II: Microdisplays Based on III-Nitride Wide Band Gap Semiconductors

    Amount: $100,000.00

    The goal of this SBIR Phase II project is to bring the demonstrated Gallium Nitride (GaN) microdisplay technology to industrial maturity and to final commercialization levels. The project's goal will ...

    SBIR Phase I 2004 National Science Foundation
  6. SBIR Phase II: Microdisplays Based on III-Nitride Wide Band Gap Semiconductors

    Amount: $467,672.00

    The goal of this SBIR Phase II project is to bring the demonstrated Gallium Nitride (GaN) microdisplay technology to industrial maturity and to final commercialization levels. The project's goal will ...

    SBIR Phase II 2005 National Science Foundation
  7. AlN Based Extreme Ultraviolet (EUV) Detectors

    Amount: $100,000.00

    This Phase I project is to investigate the feasibility for achieving EUV detectors for space applications by exploiting the ultrahigh bandgap semiconductor - AlN. We plan to devise methods to improve ...

    STTR Phase I 2006 National Aeronautics and Space Administration
  8. 3D Integrated Full Color Microdisplays Based on InGaN/AlGaInP Semiconductor Microemitter Arrays

    Amount: $70,000.00

    The goal of this SBIR project is to develop next generation inorganic semiconductor based emissive microdisplays with the following merits: Much higher brightness and power efficiency (5 x) than the ...

    SBIR Phase I 2007 ArmyDepartment of Defense
  9. STTR Phase I: Erbium Doped III-Nitride Materials and Photonic Structures for Optical Communications

    Amount: $100,000.00

    The Small Business Technology Transfer Research (STTR) Phase I project will develop metal-organic chemical vapor deposition (MOCVD) growth technology for the in-situ Er incorporation into III-nitride ...

    STTR Phase I 2007 National Science Foundation
  10. 3D Integrated Full Color Microdisplays Based on InGaN/AlGaInP Semiconductor Microemitter Arrays

    Amount: $730,000.00

    The goal of this SBIR project is to develop next generation inorganic semiconductor micro-emitter based emissive microdisplays with the following merits: (1) Much higher brightness and power efficienc ...

    SBIR Phase II 2009 ArmyDepartment of Defense

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