High Power III-Nitride Heterojunction Field-Effect Effect Transistor Development

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$70,000.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
HQ00603C0087
Award Id:
64114
Agency Tracking Number:
031-0846
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2033 Plymouth Road, Manhattan, KS 66503, KS, 66503
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Hongxing Jiang
President
(785) 770-7814
III_N@hotmail.com
Business Contact:
Jingyu Lin
Executive Chair
(785) 565-1466
III_N@hotmail.com
Research Institute:
n/a
Abstract
The research proposed here is built on the recent successful fabrication of metal oxide semiconductor heterjunction field effect transistors (MOS-HFETs) based on AlGaN/GaN heterostructures with very high drain-current-driving and gate-control capabilitiesas well as unprecedented high breakdown voltages by the P.I.s research group at Kansas State University. III-nitride HFETs have great promises in microwave/millimeter-wave electronics applications. However, one of the critical issues in the development ofhigh performance devices is the degradation of the gate that leads to the premature breakdown and hence a deficient device performance with a reduction of output power, the RF efficiency and noise figure. Much improvement in epitaxial materials qualityand device structure design is needed. The proposed research targets at the aforementioned issues. The objectives are to¿ further optimize AlGaN/GaN HFET material and structural quality by employing innovative approaches such as barrier delta doping to enhance the drain-current-driving and gate-control and hence power/current delivering capabilities, while increasebreakdown voltage and reduce leakage current as well as the current collapse effect.¿ develop innovative approaches for processing III-nitride HFETs, including e-beam- and deep UV photo-lithography patterning, plasma dry etching, and contact metallization;¿ fabricate HFET devices for extensive testing under RF power (~10 GHz - X-band) conditions. The technologies based on GaN high power electronic devices will be extremely important for future DOD technologies, including radar and microwave/millimeterwave communications (terrestrial, airbone, and space-based). In a broad sense, semiconductorelectronics play an important role in the overall functioning of national defense and military weapons systems. In the area of civilian applications, modern microelectronic devices based on semiconductor HFETs have a wide range of applications, includingcommunications such as radar links, direct broadcast satellite television, cellular telephone, cable television converters, and data processing applications. The HFETs devices fabricated in other technologies (e.g. AlGaAs) have been in production for manyyears. However, the modern microelectronic industry is constantly face demands for higher performance as well as lower costs. III-nitrides are emerging as one of the most important electronic materials for these applications due to their very high peakelectron velocity, high saturation velocity, high breakdown voltage, low noise, and thermal stability of the system.

* information listed above is at the time of submission.

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