3D Integrated Full Color Microdisplays Based on InGaN/AlGaInP Semiconductor Microemitter Arrays

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$70,000.00
Award Year:
2007
Program:
SBIR
Phase:
Phase I
Contract:
W15P7T-08-C-P602
Agency Tracking Number:
A072-082-2377
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
III-N TECHNOLOGY, INC.
2033 Plymouth Road, Manhattan, KS 66503, KS, 66503
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
017213773
Principal Investigator:
Zhaoyang Fan
VP for Research
(785) 341-6964
zyfan@3n-tech.com
Business Contact:
Jingyu Lin
Executive Chair
(785) 341-4484
jylin@3n-tech.com
Research Institution:
n/a
Abstract
The goal of this SBIR project is to develop next generation inorganic semiconductor based emissive microdisplays with the following merits: Much higher brightness and power efficiency (5 x) than the current filter based LCD and OLED microdisplays. Resolution and pixel density higher than 15 micron per pixel with VGA, SVGA and higher format. RGB narrow bandwidth (~ 25 nm) with high color fidelity and gamut exceeding the current display standard. Broad full color tunability. High gray scale. Wide viewing angle (>120 o). Pixel response on nanoseconds scale. Robust and long lifetime. To achieve the above goals, the proposed architecture will be based on 3D integration of stacked semiconductor RGB micro-emitter pixels with silicon CMOS driver/processor. The RGB micro-emitters have a vertically stacked structure with full-color tunability, ensuring a minimum pixel size. They are based on highly efficient InGaN for blue/green wavelength and AlGaInP for red wavelength emission, which are vertically integrated through thin-film transfer. The micro-emitter array will be bonded onto a silicon IC driver/processor substrate by flip-chip bonding and SiO2 based wafer bonding.

* information listed above is at the time of submission.

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