FERROELECTRIC HETEROSTRUCTURES FOR HIGH-DENSITY DRAMS

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$59,806.00
Award Year:
1994
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
25536
Agency Tracking Number:
25536
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
87 Church 380379, East Hartford, CT, 06138
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Qi Li, Phd
(203) 528-9806
Business Contact:
() -
Research Institute:
n/a
Abstract
The innovations of the proposed program are: 1) advancing thin-film deposition technology to achieve fully epitaxial growth of ferroelectric heterostructures on silicon substrates, by using the highly successful pulsed laser deposition (PLD) technique; 2) replacing the Pt bottom electrode with the epitaxial conductive oxide material; 3) achieving a full monolithic integration of high-density ferroelectric/conductive oxide capacitors with Si integrated circuits (ICs). The main thrust of Phase I will be to demonstrate the feasibility of epitaxial growth of a novel ferroelectric heterostructure, on top of an epitaxial YSZ buffered silicon substrate.

* information listed above is at the time of submission.

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