FERROELECTRIC HETEROSTRUCTURES FOR HIGH-DENSITY DRAMS
Small Business Information
87 Church 380379, East Hartford, CT, 06138
Qi Li, Phd
AbstractThe innovations of the proposed program are: 1) advancing thin-film deposition technology to achieve fully epitaxial growth of ferroelectric heterostructures on silicon substrates, by using the highly successful pulsed laser deposition (PLD) technique; 2) replacing the Pt bottom electrode with the epitaxial conductive oxide material; 3) achieving a full monolithic integration of high-density ferroelectric/conductive oxide capacitors with Si integrated circuits (ICs). The main thrust of Phase I will be to demonstrate the feasibility of epitaxial growth of a novel ferroelectric heterostructure, on top of an epitaxial YSZ buffered silicon substrate.
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