Epitaxial Growth of High Quality SiC of Pulsed Laser Deposition

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$59,796.00
Award Year:
1994
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
25950
Agency Tracking Number:
25950
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
P.o. Box 380379, East Hartford, CT, 06138
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. David G. Hamblen
(203) 528-9806
Business Contact:
() -
Research Institute:
n/a
Abstract
SiC is an attractive material for high temperature, high frequency and high power electronic applications because of its wide band gap, high thermal conductivity, and high breakdown voltage. Two polytypes of SiC which have received the most attention are the 3C cubic structure and the 6H hexagonal structure due to their individual properties of higher electron mobility (1000 cm3/Vs) and larger band gap (2.9 eV), respectively. This proposal offers the development of a process for growing high quality (low defect density), epitaxial SiC films on 6H-SiC and Si substrates, using Pulsed Laser Deposition (PLD). Preliminary research in our laboratory has demonstrated that epitaxial 3C-SiC thin films can be deposited on Si by PLD at substrate temperatures of 900-950 Degrees C using a novel surface precleaning method. By optimizing the process conditions, it should be possible to lower substrate temperature and grow device quality 3C-SiC films on Si. PLD should also be applicable to depositing high quality 3C- and 6H-SiC filmson 6H-SiC. Phase I research will demonstrate the deposition of high quality SiC films on 6H-SiC and Si substrates. Phase II will systematically improve size and quality of the films at commercially acceptable growth rates. OPTION TASK: None submitted

* information listed above is at the time of submission.

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