EXITAXIAL FERROELECTRIC/COMDUCTIVE OXIDE THIN-FILM HETEROSTRUCTURES ON SILICON FOR MICROELECTRONICS APPLICATIONS

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 27336
Amount: $299,171.00
Phase: Phase II
Program: SBIR
Awards Year: 1996
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
87 Church St, Po Box 380379, East Hartford, CT, 06138
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Qi Li
 (203) 528-9806
Business Contact
Phone: () -
Research Institution
N/A
Abstract
IMPORTANT TECHNOLOGIC OBSTACLES MUST BE REMOVED BEFORE SEMICONDUCTOR DEVICES MONOLITHICALLY INTEGRATED WITH OXIDE FERROELECTRICS CAN BECOME A PRACTICAL REALITY. THE INNOVATIONS OF THE PROGRAM ARE; (1) ADVANCING THIN-FILM DEPOSITION TECHNOLOGY TO ACHIEVE FULLY EPITAXIAL GROWTH OF FERROELECTRIC FILMS ON SILICON SUBSTRATES, BY USING THE HIGHLY SUCCESSFUL PULSED LASER DEPOSITION (PLD) TECHNIQUE; (2) REPLACING THE PT BOTTOM ELECTRODE WITH AN EPITAXIAL CONDUCTIVE OXIDE MATERIAL; AND (3) ACHIEVING A FULL MONOLITHIC INTEGRATION OF HIGH-DENSITY FERROELECTRIC/CONDUCTIVE OXIDE CAPACITORS WITH SI INTEGRATED CIRCUITS. THE MAIN THRUST IS TO DEMONSTRATE THE FEASIBILITY OF EPITAXIAL GROWTH OF A FERROELECTRIC FILM ON TOP OF A CONDUCTIVE OXIDE FILM, ON TOP OF AN EPITAXIAL YSZ BUFFERED SILICON SUBSTRATE. THE RESULTING HETEROSTRUCTURES ARE BEING USED TO FABRICATE A SIMPLE FERROELECTRIC SWITCHED CAPACITOR. THIS DEVICE WILL BE FULLY CHARACTERIZED AND WILL BECOME THE BASIC BUILDING BLOCK FOR APPLICATIONS OF FERROELECTRIC THIN FILMS TO THE MICROELECTRONICS INDUSTRY.

* Information listed above is at the time of submission. *

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