EXITAXIAL FERROELECTRIC/COMDUCTIVE OXIDE THIN-FILM HETEROSTRUCTURES ON SILICON FOR MICROELECTRONICS APPLICATIONS

Award Information
Agency:
National Science Foundation
Branch:
N/A
Amount:
$299,171.00
Award Year:
1996
Program:
SBIR
Phase:
Phase II
Contract:
N/A
Agency Tracking Number:
27336
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Advanced Fuel Research Inc.
87 Church St, Po Box 380379, East Hartford, CT, 06138
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 Qi Li
 (203) 528-9806
Business Contact
Phone: () -
Research Institution
N/A
Abstract
IMPORTANT TECHNOLOGIC OBSTACLES MUST BE REMOVED BEFORE SEMICONDUCTOR DEVICES MONOLITHICALLY INTEGRATED WITH OXIDE FERROELECTRICS CAN BECOME A PRACTICAL REALITY. THE INNOVATIONS OF THE PROGRAM ARE; (1) ADVANCING THIN-FILM DEPOSITION TECHNOLOGY TO ACHIEVE FULLY EPITAXIAL GROWTH OF FERROELECTRIC FILMS ON SILICON SUBSTRATES, BY USING THE HIGHLY SUCCESSFUL PULSED LASER DEPOSITION (PLD) TECHNIQUE; (2) REPLACING THE PT BOTTOM ELECTRODE WITH AN EPITAXIAL CONDUCTIVE OXIDE MATERIAL; AND (3) ACHIEVING A FULL MONOLITHIC INTEGRATION OF HIGH-DENSITY FERROELECTRIC/CONDUCTIVE OXIDE CAPACITORS WITH SI INTEGRATED CIRCUITS. THE MAIN THRUST IS TO DEMONSTRATE THE FEASIBILITY OF EPITAXIAL GROWTH OF A FERROELECTRIC FILM ON TOP OF A CONDUCTIVE OXIDE FILM, ON TOP OF AN EPITAXIAL YSZ BUFFERED SILICON SUBSTRATE. THE RESULTING HETEROSTRUCTURES ARE BEING USED TO FABRICATE A SIMPLE FERROELECTRIC SWITCHED CAPACITOR. THIS DEVICE WILL BE FULLY CHARACTERIZED AND WILL BECOME THE BASIC BUILDING BLOCK FOR APPLICATIONS OF FERROELECTRIC THIN FILMS TO THE MICROELECTRONICS INDUSTRY.

* information listed above is at the time of submission.

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