Rapid Thermal Annealing Process with Real-Time Monitoring for SiO2 Layer Formation
Small Business Information
P.o. Box 380379, 87 Church, Street, East Hartford, CT, 06138
AbstractFuture manufacturing of integrated circuits (IC's), will require analytical instrumentation that can provide on-line process monitoring linked to real time process control. Fourier Transform Infrared (FT-IR) spectroscopy can be effectively utilized to meet this need. As an example, Advanced Fuel Research, Inc. (AFR) has successfully employed simultaneous FT-IR reflection and emission spectroscopy to measure the sheet resistance of shallow junctions and the surface temperature during an anneal at elevated temperature (up to 950oC) on a 2 sec time scale. This project will develop the technology for microelectronics fabrication with on-line wafer-by-wafer characterization by FT-IR, and automated real-time process control. The objective of this Phase I project is to develop a contactless technology based on FT-IR emission and transmission spectroscopy to monitor SiO2 film production. The project will employ advanced FT-IR components developed specifically for process monitoring and proprietary software which measures film composition as well as thickness with imporved accuracy compared to present methods. This technique is also intended to monitor the presence of mechanical stress as well as substrate temperature. The proposed technology can be applied to improve both wafer quality, and yields for the production of epitaxial silicon, silicon oxide, silicon nitride, and polycrystalline silicon. In addition, FT-IR instrumentation, capable of real-time monitoring has extensive commercial potential for safety, health, and environmental applications (e.g., continuous emission monitoring, ambient air monitoring, and other process monitoring applications). This project will be led by the joint venture of AFR and ON-Line Technologies, Inc. (ON-Tech). Texas Instruments, Inc. (TI) will be a subcontractor. Phase I will prove the feasibility of data collection during the production of SiO2 films by Chemical Vapor Deposition (CVD) in a Rapid Thermal Processor (RTP). On-Tech will design an FT-IR measurement system. TI will fabricate calibrations samples. AFR will measure the ex-situ film characteristics, and develop the analysis method and software. On-Tech will design and construct the physical and optical interface
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