Crested Tunnel Barriers for Fast, High Density, Nonvolatile Memory Devices

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: F49620-01-C-0059
Agency Tracking Number: F013-0070
Amount: $99,494.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2001
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
87 Church Street, East Hartford, CT, 06108
DUNS: 021804661
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 David Hamblen
 (860) 528-9806
Business Contact
 Michael Serio
Title: President
Phone: (860) 528-9806
Research Institution
 Ivar Strand
 Office of Sponsored Programs, SUNY @ Stony Brook
Stony Brook, NY, 11794
 (631) 632-4402
 Domestic nonprofit research organization
Crested multi-layer tunnel barriers have been proposed, which offer a revolutionary solution to overcome density to speed trade-offs characteristic of present data storage technologies. Practical implementation of the proposed technology will involve useof thin film materials which are readily manufacturable and CMOS-compatible. A critical need exists for experimental verification of the theoretical predictions regarding these advanced structures. In addition, challenges lay ahead in developing asuitable deposition technology for fabrication of the ultra-thin graded or multilayered structures involved. Advanced Fuel Research, Inc., and the State University of New York at Stony Brook will develop a technology for fabrication of crested tunnelbarrier devices based on promising thin film material combinations. Phase I will demonstrate barrier tunneling in asymmetric, two-layer barrier structures in good agreement with theoretical predictions. Phase I will also conduct a study to assesscritical manufacturing issues such as suitable deposition methods required for fabrication of the ultrathin layer crested barrier devices in a production environment. Phase II will support continued theoretical development, develop scalable depositionprocesses, and demonstrate prototype memory devices.Successful development of the proposed high density, fast memory technology will have immediate impact in portable electronic components that require low cost, minimal power consumption, nonvolatilememory, i.e. flash memory. As the demand for increased memory and functionality continues, faster, higher density flash memory technology will be required. It is expected that a fast, high density, low power, nonvolatile memory technology will alsocompete with DRAM technology presently used in personal computers. The commercial potential is enormous, with both flash memory and DRAM representing multi-billion dollar per year markets.

* Information listed above is at the time of submission. *

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