Crested Tunnel Barriers for Fast, High Density, Nonvolatile Memory Devices

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$500,000.00
Award Year:
2003
Program:
STTR
Phase:
Phase II
Contract:
F49620-04-C-0008
Agency Tracking Number:
F013-0070
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Advanced Fuel Research, Inc.
87 Church Street, East Hartford, CT, 06108
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
David Hamblen
Vice-President
(860) 528-9806
dhamblen@AFRinc.com
Business Contact:
Michael Serio
President
(860) 528-9806
mserio@afrinc.com
Research Institution:
STATE UNIV. OF NY STONY BROOK
Lydia Chabza
Office of Sponsored Programs, SUNY @ Stony Brook
Stony Brook, NY, 11794
(631) 632-9139
Nonprofit college or university
Abstract
Crested multi-layer tunnel barriers have been proposed, which offer a revolutionary solution to overcome density to speed trade-offs characteristic of present data storage technologies. Practical implementation of the proposed technology will involve useof thin film materials that are readily manufacturable and CMOS-compatible. A critical need exists for experimental verification of the theoretical predictions regarding these advanced structures. In addition, challenges lay ahead in developing asuitable deposition technology for fabrication of the ultra-thin graded or multi-layered structures involved. Advanced Fuel Research, Inc. and the State University of New York at Stony Brook will develop a technology for fabrication of crested tunnelbarrier devices based on promising thin film material combinations. Phase I research demonstrated tunneling in thin film barrier structures in good agreement with theoretical predictions. Phase II will optimize material properties, develop processingtechniques for fabricating multi-layered crested barrier structures and demonstrate prototype memory devices employing the multi-layered crested barrier technology. Successful development of the proposed high density, fast memory technology will haveimmediate impact in portable electronic components that require low cost, minimal power consumption, nonvolatile memory, i.e. flash memory. As the demand for increased memory and functionality continues, faster, higher density flash memory technology willbe required. It is expected that a fast, high density, low power, nonvolatile memory technology will also compete with DRAM technology presently used in personal computers. The commercial potential is enormous, with both flash memory and DRAM representingmulti-billion dollar per year markets.

* information listed above is at the time of submission.

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