4WAVE, INC.

Basic Information

22660 Execute Drive
Suite 101
Sterling, VA, 20166-

Company Profile

n/a

Additional Details

Field Value
DUNS: 102768426
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 11


  1. Low-cost device relevant Indium Gallium Nitride (InGaN) or Alternatives

    Amount: $97,579.00

    The project aims to grow device-quality InxGa1-xN, an important semiconductor because the band gap can be shifted widely by varying x, using a new form of plasma sputtering, Biased-Target Deposition ( ...

    SBIR Phase I 2009 Defense Advanced Research Projects Agency Department of Defense
  2. Transition Metal Oxide Optical Switch

    Amount: $70,000.00

    We propose to test a new sputtering method, Biased Target Deposition (BTD), for growth of polycrystalline VO2 thin films. The BTD method has been shown to be more stable and flexible for reactive depo ...

    SBIR Phase I 2009 Army Department of Defense
  3. Low Damage Ion Beam Etching Technique and Method for Compositional Profiling of Thin Multilayer Films

    Amount: $73,342.00

    Thin film multilayers of nanometer scale thickness are fundamental to the future of electronics and communications technologies. Chemical depth profiling by ion etching techniques are critical to the ...

    SBIR Phase I 2003 National Institute of Standards and Technology Department of Commerce

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