Low-cost device relevant Indium Gallium Nitride (InGaN) or Alternatives

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-09-C-0215
Agency Tracking Number: 08SB2-0806
Amount: $97,579.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: 2008
Solicitation Topic Code: SB082-053
Solicitation Number: 2008.2
Small Business Information
22660 Execute Drive, Suite 101, Sterling, VA, 20166
DUNS: 102768426
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 David Baldwin
 VP of R&D
 (703) 787-9283
Business Contact
 Sami Antrazi
Title: President
Phone: (703) 787-9283
Email: santrazi@4waveinc.com
Research Institution
The project aims to grow device-quality InxGa1-xN, an important semiconductor because the band gap can be shifted widely by varying x, using a new form of plasma sputtering, Biased-Target Deposition (BTD). The major objectives are to grow x > 0.05 material on sapphire at 600-800°C (standard) and 300-500°C (beneficially reduced) temperatures, and to characterize material quality via X-ray diffraction and photoluminescence seeking defined criteria. BTD uses a separate plasma source to provide ions for sputtering, so low bias voltages on the targets produce unprecedented (for sputtering) low and controllable kinetic energies of arriving In, Ga and N atoms at the growing InGaN surface. The hypothesis will be tested that slightly elevated particle energies might replace the atom mobility effects of heating and allow growth at lower temperature, which would solve a well-known phase segregation problem in InxGa1-xN as x is increased. Techniques within BTD give an aggressive nitriding environment, starting from inert N2, so InGaN is grown by co-sputtering from separate In and Ga metal sputter targets, the Ga target being a molten pool.

* Information listed above is at the time of submission. *

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