- Award Details
SBIR Phase I: A Novel Semiconductor Memory Having Both Volatile and Non-Volatile Modes
National Science Foundation
Agency Tracking Number:
Solicitation Topic Code:
Small Business Information
1657 Curtner Ave, San Jose, CA, 95125
Socially and Economically Disadvantaged:
AbstractThis Small Business Innovation Research Phase I project seeks to demonstrate the high-density feasibility of a novel memory, which has both volatile and non-volatile functionality. Such memory combines the non-volatile memory's ability to retain information in the absence of power (such as Flash memory) and the fast access speed and reliability of a volatile memory (such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM)). This memory is fabricated using silicon-based fabrication process, eliminating the need of new materials or new process technology developments. One of the many applications of the proposed memory is to enable power-efficient computing applications and mobile devices. A power-efficient memory such as the one proposed in this proposal can reduce the overall data center power consumption by up to 75%. This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).
* information listed above is at the time of submission.