SBIR Phase I: A Novel Semiconductor Memory Having Both Volatile and Non-Volatile Modes

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$93,000.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
0912771
Agency Tracking Number:
0912771
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Zeno Semiconductor
1657 Curtner Ave, San Jose, CA, 95125
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
808557776
Principal Investigator:
Yuniarto Widjaja
PhD
(650) 575-3555
ywidjaja@zenosemi.com
Business Contact:
Yuniarto Widjaja
PhD
(650) 575-3555
ywidjaja@zenosemi.com
Research Institution:
n/a
Abstract
This Small Business Innovation Research Phase I project seeks to demonstrate the high-density feasibility of a novel memory, which has both volatile and non-volatile functionality. Such memory combines the non-volatile memory's ability to retain information in the absence of power (such as Flash memory) and the fast access speed and reliability of a volatile memory (such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM)). This memory is fabricated using silicon-based fabrication process, eliminating the need of new materials or new process technology developments. One of the many applications of the proposed memory is to enable power-efficient computing applications and mobile devices. A power-efficient memory such as the one proposed in this proposal can reduce the overall data center power consumption by up to 75%. This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).

* information listed above is at the time of submission.

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