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Ponderomotive Field Effect Transistor

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9550-10-C-0003
Agency Tracking Number: F08B-T18-0187
Amount: $99,883.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: AF08-BT18
Solicitation Number: 2008.B
Solicitation Year: 2008
Award Year: 2010
Award Start Date (Proposal Award Date): 2009-10-15
Award End Date (Contract End Date): 2010-07-15
Small Business Information
6201 East Oltorf St. Suite 400
Austin, TX 78741
United States
DUNS: 100651798
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Steve Savoy
 Founder & VP Technology Dev.
 (512) 389-9990
Business Contact
 Keith Jamison
Title: President
Phone: (512) 389-9990
Research Institution
 University of Texas
 Gennady Shvets
1 University Station C1600 RLM 11.216
Austin, TX 78712
United States

 (512) 471-7371
 Nonprofit College or University

Over the past fifty years, technological advancements in the microelectronics industry have been astounding. As a result of this success, today’s microfabricated devices are inexpensive, can be produced in large volumes, and can be fabricated with billions of sub-100 nm logic elements as small area microchips. Further increases in computational density will require even more innovation, as fundamental limitations in semiconductor lithography are approached. One strong candidate for continued miniaturization is the integration of optical signals with electronics at the transistor level. An even more desirable device would be a transistor (or a similar electronic element) whose action is strongly modulated (gated) by an optical signal. Such device would benefit from the extraordinary bandwidth of the optical signal that could be delivered directly from a fiber, as well as from the logic capabilities of an electronic transistor. To fulfill the need for such a device, Nanohmics Inc. and Drs. Gennady Shvets and Alex Demkov at The University of Texas at Austin propose to develop an optically gated Ponderomotive Effect Transistor (PET) consisting of a plasmonic antenna placed in the gate area. The plasmonic antenna concentrates the intensity of the otherwise broadly focused laser beam in the gate region and locally modifies the band structure of the device. BENEFIT: With successful implementation of the proposed research effort, a new paradigm in microelectronic processing will be enabled. Fabrication of a ponderomotive effect transistor will provide a new method for transmitting data between microchip nodes and provide compelling capabilities in logic processing and information storage. This will be the result of the fact that transmission of optical data occurs without low loss. The key to the proposed innovation is the successful ability to model and fabricate device structure dimensions that can take advantage of the exceptionally high amplification found with resonant plasmonic coupling.

* Information listed above is at the time of submission. *

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