ELIMINATION OF EXCESSIVE SURFACE DEFECTS IN GAAS IC MATERIALUSING NON-CONTACT POLISHING

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: N/A
Agency Tracking Number: 269
Amount: $380,000.00
Phase: Phase II
Program: SBIR
Awards Year: 1984
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Advanced Research & Applctns
1223 E. Arques Avenue, Sunnyvale, CA, 94086
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 () -
Business Contact
 T.J. MAGEE, MGR.
Phone: (408) 733-7780
Research Institution
N/A
Abstract
THE EXTENSION OF A NON-CONTACT POLISHING TECHNIQUE PREVIOUSLY DEVELOPED FOR IT-VI COMPOUNDS, IS PROPOSED FOR (100) GAAS WAFERS INTEGRATED CIRCUIT APPLICATIONS IN MIND. AN INITIAL TASK WILL BE TO CHARACTERIZE SUCH NON-CONTACT POLISHED SURFACES AND COMPARE THEM WITH CONVENTIONALLY POLISHED SURFACES. FOLLOWING SUCCESSFUL DEVELOPMENT OF THE TECHNIQUE, WE WILL INVESTIGATE THE FEASIBILITY OF SCALE-UP FOR POLISHING THREE-INCH WAFER FOR PHASE II IMPLEMENTATION.

* information listed above is at the time of submission.

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