ELIMINATION OF EXCESSIVE SURFACE DEFECTS IN GAAS IC MATERIALUSING NON-CONTACT POLISHING

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$380,000.00
Award Year:
1984
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
269
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Advanced Research & Applctns
1223 E. Arques Avenue, Sunnyvale, CA, 94086
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
() -
Business Contact:
T.J. MAGEE, MGR.
(408) 733-7780
Research Institution:
n/a
Abstract
THE EXTENSION OF A NON-CONTACT POLISHING TECHNIQUE PREVIOUSLY DEVELOPED FOR IT-VI COMPOUNDS, IS PROPOSED FOR (100) GAAS WAFERS INTEGRATED CIRCUIT APPLICATIONS IN MIND. AN INITIAL TASK WILL BE TO CHARACTERIZE SUCH NON-CONTACT POLISHED SURFACES AND COMPARE THEM WITH CONVENTIONALLY POLISHED SURFACES. FOLLOWING SUCCESSFUL DEVELOPMENT OF THE TECHNIQUE, WE WILL INVESTIGATE THE FEASIBILITY OF SCALE-UP FOR POLISHING THREE-INCH WAFER FOR PHASE II IMPLEMENTATION.

* information listed above is at the time of submission.

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